New papers: Applied Physics Letters 100, 143502 (2012); doi: 10.1063/1.3699221 Print
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Thursday, 05 April 2012 10:26

New papers:

Operation mechanism of Schottky barrier nonvolatile memory with high conductivity InGaZnO active layer

Citation: Appl. Phys. Lett. 100, 143502 (2012); doi: 10.1063/1.3699221
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Thanh Thuy Trinh1,2,Van Duy Nguyen3,Hong Hanh Nguyen1,Jayapal Raja1,Juyeon Jang1,Kyungsoo Jang1,Kyunghyun Baek1,Vinh Ai Dao1,2, and Junsin Yi1
1Information and Communication Device Laboratory, School of Information and Communication Engineering, Sungkyunkwan University, South Korea
2Faculty of Materials Science, Vietnam National University, Ho Chi Minh City, Vietnam
3International Training Institute for Materials Science, Hanoi University of Science and Technology, Vietnam

(Received 28 No vember 2011; accepted 11 Mar ch 2012; published online 2 April 2012)

Abstract: Influence of Schottky contact between source/drain electrodes and high conductivity a-InGaZnO active layer to the performance of nonvolatile memory devices was first proposed. The Schottky barrier devices faced to the difficulty on electrical discharging process due to the energy barrier forming at the interface, which can be resolved by using Ohmic devices. A memory window of 2.83 V at programming/erasing voltage of ±13 V for Ohmic and 5.58 V at programming voltage of 13 V and light assisted erasing at −7 V for Schottky devices was obtained. Both memory devices using SiO2/SiOx/SiOxNy stacks showed a retention exceeding 70% of trapped charges 10 yr with operation voltages of ±13 V at an only programming duration of 1 ms.


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